| Envelope wave functions |
AlSb/InAs structure
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Self consistent valence and conduction band potential with envelope wave functions
of AlSb/InAs/AlSb quantum well structure calculated from eight-band k•p theory.
Heavily doping leads to type II --> type I transition due to the strong valence band bending.
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Valence and conduction band potential with envelope wave functions of
AlAs0.56Sb0.44/In0.53Ga0.47As/
AlAs0.56Sb0.44/InP/AlAs0.56Sb0.44/
InP/AlAs0.56Sb0.44
triple quantum well structure biased with a dc electric field.
Wave functions are calculated from eight-band k•p theory.
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AlAsSb/InP structure
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AlGaAs structure
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Valence band potential with envelope wave functions of
Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As
quantum well structure calculated from four-band Luttinger-Kohn model.
The structure is biased with a dc electric field and is under in-plane uniaxial
compression in [110] direction.
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Valence and conduction band potential with envelope wave functions of
AlSb/InAs/Al0.9Ga0.1Sb/
Al0.2Ga0.8Sb/AlSb
double quantum well structure calculated from eight-band k•p theory.
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InAs/AlGaSb structure
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